Highly Reliable TiN/ZrO2/TiN 3D Stacked Capacitors for 45 nm Embedded DRAM Technologies

Autor:	H. Del-Puppo, F. Lalanne, Bruce Boeck, N. Emonet, Audrey Berthelot, Christian Caillat, Vincent Huard, S. Barnola
Rok vydání:	2006
Předmět:	Materials science business.industry chemistry.chemical_element Equivalent oxide thickness eDRAM law.invention Capacitor Atomic layer deposition chemistry law Electronic engineering Optoelectronics Leakage current density business Tin Current density Dram
Zdroj:	2006 European Solid-State Device Research Conference.
ISSN:	1930-8876
Popis:	For the first time, we report a complete evaluation of a TiN/ZrO 2/TiN stacked capacitor suitable for 45 nm embedded DRAM (eDRAM). Indeed, this study, done on a real integration (65 nm 3D stacked capacitor flow), shows that zirconium oxide, deposited at low temperature (275degC) by atomic layer deposition (ALD), meets all the 45 nm eDRAM specifications: an equivalent oxide thickness (EOT) below 8 Aring with leakage current density within criterion ( 10 years (at Vdd = 1V)
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::f5dd5f2ffa69bc67ebf422857863e427 https://doi.org/10.1109/essder.2006.307708 Zobrazit plný text záznamu