MOVPE Growth of III-V Solar Cells on Silicon in 300 mm Closed Coupled Showerhead Reactor
| Autor: | Roesener, T., Döscher, H., Beyer, A., Brückner, S., Klinger, V., Wekkeli, A., Kleinschmidt, P., Jurecka, C., Ohlmann, J., Volz, K., Stolz, W., Hannappel, T., Bett, A.W., Dimroth, F. |
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| Jazyk: | angličtina |
| Rok vydání: | 2010 |
| Předmět: | |
| DOI: | 10.4229/25theupvsec2010-1dv.5.34 |
| Popis: | 25th European Photovoltaic Solar Energy Conference and Exhibition / 5th World Conference on Photovoltaic Energy Conversion, 6-10 September 2010, Valencia, Spain; 964-968 III-V multi-junction solar cells grown on Ge substrates have achieved the highest solar cell conversion efficiency of 41.6 %. However, this device manufacturing is still costly and a major share of the cost can be attributed to the cost of the Ge substrate. Therefore, a replacement of Ge by Si would be beneficial. However, elaborate challenges arise from the 4.1% difference in lattice constant for Si and GaAs and due to the non-polar to polar interface leading to threading dislocations and anti-phase domains, respectively. To meet the required high crystalline quality for III-V multi-junction solar cells this paper presents approaches for the Si-to-GaAs transition evaluated on an industrial 300 mm CRIUS Closed Coupled Showerhead MOVPE reactor. Anti-phase domain free GaP nucleation layers with only 0.36% lattice mismatch at room temperature were grown on Si substrate. On top of these layers step-graded Ga1-xInxP buffer structures mediate the lattice constant to GaAs although present process parameters have not yet enabled confinement of threading dislocations inside the buffer structure. A promising alternative route is the growth of an all Ge buffer layer directly on Si. Here we report on the results of the used twostep growth process. |
| Databáze: | OpenAIRE |
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