High‐speed graded‐channel AlGaN/GaN HEMTs with power added efficiency >70% at 30 GHz
| Autor: | Patrick Fay, Isaac Khalaf, R. Grabar, Erdem Arkun, Andrea Corrion, J. Wong, P. Chen, James M. Chappell, M. Antcliffe, Nivedhita Venkatesan, Jeong-Sun Moon |
|---|---|
| Rok vydání: | 2020 |
| Předmět: |
Power-added efficiency
Materials science business.industry Amplifier 020208 electrical & electronic engineering Transistor RF power amplifier Wide-bandgap semiconductor 02 engineering and technology law.invention Power (physics) law 0202 electrical engineering electronic engineering information engineering Optoelectronics Electrical and Electronic Engineering business Communication channel Power density |
| Zdroj: | Electronics Letters. 56:678-680 |
| ISSN: | 1350-911X 0013-5194 |
| DOI: | 10.1049/el.2020.0281 |
| Popis: | The authors report on highly scaled 60 nm gate length graded-channel AlGaN/GaN high electron mobility transistors (HEMTs) with a record power added efficiency (PAE) of 75% at 2.1 W/mm power density at Vdd = 10 V and the PAE of 65% at 3.0 W/mm power density at 30 GHz at Vdd = 14 V. Under two-tone power measurement, the graded-channel AlGaN/GaN HEMTs demonstrated similar power performance with peak PAE >70% at 30 GHz. This novel channel design shows great promise for high-efficiency millimetre-wave (mmW) power amplifiers up to 3 W/mm RF power density operation. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
|
Plný text