Pushing Bulk Transistor with Conventional SiON Gate Oxide for Low Power Applications

Autor:	G. Bidal, F. Boeuf, F. Payet, S. Denorme, N. Loubet, P. Perreau, C. Mezzomo, M. Marin, D. Fleury, C. Leyris, F. Leverd, P. Gouraud, C. Laviron, R. Beneyton, A. Torres, B. Imbert, D. Delille, L. Clement, G. Ghibaudo, T. Skotnicki
Rok vydání:	2008
Předmět:	Materials science Gate oxide business.industry law Transistor Optoelectronics Nanotechnology business Power (physics) law.invention
Zdroj:	Extended Abstracts of the 2008 International Conference on Solid State Devices and Materials.
DOI:	10.7567/ssdm.2008.a-7-1
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::f5d45d80d40992e16f69ef038f82a54f https://doi.org/10.7567/ssdm.2008.a-7-1 Zobrazit plný text záznamu