Band alignments of La x Al y O films on Si substrates grown by atomic layer deposition with different La/Al atomic ratios
| Autor: | Hongxia Liu, Shupeng Chen, Chenxi Fei, Feng Xingyao, Xing Wang, Lu Zhao |
|---|---|
| Rok vydání: | 2016 |
| Předmět: |
010302 applied physics
Materials science Band gap Gate leakage current Analytical chemistry 02 engineering and technology 021001 nanoscience & nanotechnology Condensed Matter Physics 01 natural sciences Atomic and Molecular Physics and Optics Electronic Optical and Magnetic Materials law.invention Capacitor Atomic layer deposition X-ray photoelectron spectroscopy law 0103 physical sciences Valence band Electrical and Electronic Engineering 0210 nano-technology Conduction band |
| Zdroj: | Journal of Materials Science: Materials in Electronics. 28:4702-4705 |
| ISSN: | 1573-482X 0957-4522 |
| Popis: | La x Al y O films were grown on p-Si substrates by atomic layer deposition technique with different La and Al precursor pulse ratios. Then atomic concentrations and band alignments of the films were determined from X-ray photoelectron spectroscopy measurements. It was found that the bandgap and valence band offset increase synchronously with increasing Al composition, while the conduction band offset varies slightly. Furthermore, as the composition of Al increased, significant decrease in the gate leakage current for the metal–insulator–semiconductor capacitors using La x Al y O films as insulators was observed due to the formation of larger bandgaps and valence band offsets. |
| Databáze: | OpenAIRE |
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