Terahertz radiation in In0.38Ga0.62As grown on a GaAs wafer with a metamorphic buffer layer under femtosecond laser excitation
| Autor: | Igor Ilyakov, Rustam A. Khabibullin, Dmitry Ponomarev, P. P. Maltsev, M. M. Grekhov, Rinat Akhmedzhanov, A. E. Yachmenev, B. V. Shishkin |
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| Rok vydání: | 2017 |
| Předmět: |
010302 applied physics
Materials science business.industry Terahertz radiation Energy conversion efficiency 02 engineering and technology Substrate (electronics) 021001 nanoscience & nanotechnology Condensed Matter Physics Laser 01 natural sciences Fluence Atomic and Molecular Physics and Optics Electronic Optical and Magnetic Materials law.invention Photomixing Optics law 0103 physical sciences Femtosecond Optoelectronics Wafer 0210 nano-technology business |
| Zdroj: | Semiconductors. 51:509-513 |
| ISSN: | 1090-6479 1063-7826 |
| DOI: | 10.1134/s1063782617040170 |
| Popis: | The results of time-domain spectroscopy of the terahertz (THz) generation in a structure with an In0.38Ga0.62As photoconductive layer are presented. This structure grown by molecular-beam epitaxy on a GaAs substrate using a metamorphic buffer layer allows THz generation with a wide frequency spectrum (to 6 THz). This is due to the additional contribution of the photo-Dember effect to THz generation. The measured optical-to-terahertz conversion efficiency in this structure is 10–5 at a rather low optical fluence of ~40 μJ/cm2, which is higher than that in low-temperature grown GaAs by almost two orders of magnitude. |
| Databáze: | OpenAIRE |
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