Low energy electron diffraction and photoelectron spectroscopy study of GaAs(113)A and surfaces prepared by molecular beam epitaxy and by ion bombardment and annealing
| Autor: | Carsten Setzer, Jutta Platen, Wolfgang Ranke, Karl Jacobi |
|---|---|
| Rok vydání: | 1999 |
| Předmět: |
Low-energy electron diffraction
Chemistry Annealing (metallurgy) Analytical chemistry Surfaces and Interfaces Condensed Matter Physics Surfaces Coatings and Films Gallium arsenide chemistry.chemical_compound X-ray photoelectron spectroscopy Electron diffraction Materials Chemistry Spectroscopy Surface reconstruction Molecular beam epitaxy |
| Zdroj: | Surface Science. 419:291-302 |
| ISSN: | 0039-6028 |
| DOI: | 10.1016/s0039-6028(98)00807-3 |
| Popis: | The GaAs (113)A and ( 1 1 3 )B surfaces were prepared by molecular beam epitaxy (MBE) and ion bombardment and annealing (IBA). The surfaces were investigated in situ by means of low-energy electron diffraction and surface core-level (SCL) spectroscopy. Both orientations show 1×1 reconstructions after preparation with IBA. For the (113)A face a stable, 8×1 reconstructed surface was prepared by MBE. SCL shifts (SCLSs) are observed for As 3d (+0.53 eV) and Ga 3d (−0.46, +0.36 eV) which support a recently proposed model by Wassermeier et al. [Phys. Rev. B 51 (1995) 14721]. The (113)A(8×1) surface exhibits surface resonances at −1.0 and −3.8 eV below the valence band maximum. The dispersion of these resonances is only weak and does not follow the symmetry of the reconstructed surface. The ( 1 1 3 )B surface shows { 1 1 1 }B and {110} facets after preparation with MBE. This is confirmed by SCLSs for As 3d (−0.63, +0.57 eV). |
| Databáze: | OpenAIRE |
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