Photoluminescence-Based Method for Imaging Buffer Layer Thickness in CIGS Solar Cells
| Autor: | Michele Melchiorre, Susanne Siebentritt, Germain Rey, Thorsten Trupke, Malcolm Abbott, Kaiwen Sun, Timothy Nagle, Appu Paduthol, Dmitry Poplavskyy, Valentina Serrano Escalant |
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| Rok vydání: | 2020 |
| Předmět: |
010302 applied physics
Materials science Photoluminescence business.industry Photovoltaic system Heterojunction 02 engineering and technology 021001 nanoscience & nanotechnology Condensed Matter Physics 01 natural sciences Copper indium gallium selenide solar cells Electronic Optical and Magnetic Materials 0103 physical sciences Homogeneity (physics) Optoelectronics Electrical and Electronic Engineering Photonics 0210 nano-technology business Science technology and society Excitation |
| Zdroj: | IEEE Journal of Photovoltaics. 10:181-187 |
| ISSN: | 2156-3403 2156-3381 |
| Popis: | Recent improvements in Cu(In,Ga)Se2 (CIGS) solar cells have made use of thinner CdS layers. The homogeneity of this layer is critical to maintain a high-quality CdS/CIGS heterojunction. We present an imaging method based on photoluminescence (PL) intensity ratios using UV and red excitation. UV light is partially absorbed by the CdS, while it is transparent to red photons. Hence, inhomogeneity in the CdS layer thickness produces different UV excitation of the underneath CIGS layer, while the red excitation is uniform, leading to contrast in the PL image ratio. The method is highly sensitive to detect defects or pinholes in the CdS layer and can be used as a rapid method for CdS deposition quality control. |
| Databáze: | OpenAIRE |
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