Synthesis and Surface Acoustic Wave Property of Aluminum Nitride Thin Films Fabricated on Silicon and Diamond Substrates Using the Sputtering Method

Autor:	Yoshinori Koga, Takaaki Manabe, Toshiya Kumagai, Shin-Ichi Shikata, Masatou Ishihara, Yasuo Ebata, Takako Nakamura, Syuzo Fujiwara, Hideaki Nakahata, Akihiro Hachigo
Rok vydání:	2001
Předmět:	Materials science business.industry Surface acoustic wave General Engineering General Physics and Astronomy Diamond Substrate (electronics) Sputter deposition Nitride engineering.material Optics Sputtering engineering Diamond cubic Composite material Thin film business
Zdroj:	Japanese Journal of Applied Physics. 40:5065
ISSN:	1347-4065 0021-4922
DOI:	10.1143/jjap.40.5065
Popis:	C-axis oriented aluminum nitride (AlN) thin films with a thickness of 1 µm were prepared by reactive DC magnetron sputtering on polycrystalline diamond substrates at a substrate temperature of 623 K. The average surface roughness (R a) of the AlN thin films was less than 2 nm obtained by locating the diamond substrates at a position of 100 mm from the aluminum target. The full width at half maximum (FWHM) of the rocking curve for the AlN(002) peak determined by X-ray diffraction analysis was about 0.2°. The surface acoustic wave (SAW) structures were completed by the deposition of aluminum electrodes on the as-deposited AlN surfaces. The SAW characteristics of an interdigital transducer (IDT)/AlN/diamond structure were investigated. The phase velocity and coupling coefficient were 10,120 m/s and 0.3%, respectively.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::f590fab0e66931153058f1c4b2c605be https://doi.org/10.1143/jjap.40.5065 Zobrazit plný text záznamu