Biaxial tensile strain effects on photoluminescence of different orientated Ge wafers

Autor:	Chee-Wee Liu, H.-S. Lan, T.-H. Cheng, Cheng-Ying Chen, S.-R. Jan, S.-T. Chan
Rok vydání:	2011
Předmět:	Photoluminescence Materials science Physics and Astronomy (miscellaneous) Strain (chemistry) business.industry chemistry.chemical_element Germanium Electron chemistry Ultimate tensile strength Density of states Optoelectronics Composite material business Recombination Shrinkage
Zdroj:	Applied Physics Letters. 98:101106
ISSN:	1077-3118 0003-6951
DOI:	10.1063/1.3562589
Popis:	The enhanced photoluminescence of direct transition is observed on (100), (110), and (111) Ge under biaxial tensile strain. The enhancement is caused by the increase in electron population in the Γ valley. The shrinkage of energy difference between the lowest L valleys and the Γ valley is responsible to the population increase on (100) and (110) Ge. For (111) Ge, the energy difference increases under biaxial tensile strain but the strain decreases energy difference between the electron quasi-Fermi level and the Γ valley due to the small density of state of the lowest L valleys, and thus enhances direct recombination.
Databáze:	OpenAIRE
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