| Autor: |
Elzbieta Kolawa, J. S. Chen, P.J. Pokela, J. S. Reid, M.-A. Nicolet |
| Rok vydání: |
1991 |
| Předmět: |
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| Zdroj: |
Applied Surface Science. 53:373-376 |
| ISSN: |
0169-4332 |
| DOI: |
10.1016/0169-4332(91)90288-u |
| Popis: |
Thin films of amorphous Ta-Si-N alloys were deposited by reactive RF sputtering of a Ta5Si3 target in an Ar/N2 ambient. These alloy films were tested as diffusion barriers between Al and Si, as well as between Cu and Si. Electrical measurements on Schottky diodes and on shallow n+p junction diodes were used to evaluate the thermal stability of the 〈Si〉 /W48Si20N32(20 nm)/Ta36Si14N50(80 nm)/Al(1000 nm) metallization. The amorphous W48Si20N32 contacting layer was added to raise the Schottky barrier height of the metallization on n-type Si. Both the shallow junctions and the Schottky diodes are stable up to 700°C for 20 min (above the Al melting point of 660°C) which makes this material the best thin-film diffusion barrier on record. Furthermore, the same Ta36Si14N50 amorphous film maintains the integrity of the I–V characteristics of the shallow n+p junctions with the 〈Si〉 /TiSi2(30 nm)/Ta36Si34N50(80 nm)/Cu(500 nm) metallization up to 900°C for 30 min annealing in vacuum. The TiSi2 contacting layer was added to assure an ohmic characteristic of the contact. For comparison, the same shallow junctions with 〈Si〉 /Cu metallizations were shorted after annealing at 300°C. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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