Demonstration of sub-45nm features using azimuthal polarization on a 1.30NA immersion microstepper

Autor:	Chris K. Van Peski, Emil Piscani, Shane R. Palmer
Rok vydání:	2007
Předmět:	Materials science business.industry Polarization (waves) law.invention Azimuth Optics Optical proximity correction Resist law Miniaturization Photolithography business Lithography Immersion lithography
Zdroj:	SPIE Proceedings.
ISSN:	0277-786X
DOI:	10.1117/12.720863
Popis:	The practical extendibility of immersion lithography to the 45nm half-pitch is being investigated on a 1.30NA immersion projection microstepper installed at SEMATECH North in Albany, New York. Preliminary implementation of various aperture designs and polarization configurations have been used to demonstrate imaging beyond the 90nm pitch. Optical proximity correction (OPC) and other resolution enhancement technique (RET) strategies coupled with resist stack optimization of dual-layer bottom anti-reflective coating (BARC) systems offer a growing platform of materials and illumination configurations for the 45nm node. In this demonstration of a RET strategy, linear-polarized light is selectively rotated at the coherence aperture to simultaneously image sub-90nm pitch features along the x and y axes within the same field. Scanning electron microscope (SEM) images demonstrate the capability of the immersion micro-exposure tool (iMET) to support dual-orientation imaging with resolution down to the 84nm pitch.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::f581228bd3623e1a78d7cdf586381cd4 https://doi.org/10.1117/12.720863 Zobrazit plný text záznamu