Electronic properties of the semiconductor TiSe2
| Autor: | Torsten Stemmler, Recardo Manzke, Julia Rasch |
|---|---|
| Rok vydání: | 2007 |
| Předmět: |
Condensed matter physics
Chemistry Photoemission spectroscopy Band gap Mechanical Engineering Fermi level Metals and Alloys Angle-resolved photoemission spectroscopy Semimetal symbols.namesake Band bending Mechanics of Materials Materials Chemistry symbols Direct and indirect band gaps Quasi Fermi level |
| Zdroj: | Journal of Alloys and Compounds. 442:262-264 |
| ISSN: | 0925-8388 |
| DOI: | 10.1016/j.jallcom.2006.08.362 |
| Popis: | Angle-resolved photoelectron spectroscopy (ARPES) was used to investigate the electronic structure of 1 T -TiSe 2 single crystals with He I radiation ( ℏ ω = 21.22 eV) as a function of exposure to H 2 O at room temperature. A significant enhancement of the Ti 3d peak near the Fermi energy E F is observed and we find a small shift for the lowest conduction band and the uppermost valence bands to lower binding energies depending on the amount of adsorbate. We are able to undoubtedly determine 1 T -TiSe 2 as a small gap semiconductor, because the H 2 O adsorption onto the van der Waals-like surface causes a distinct band bending and an almost filled conduction band making the band gap now detectable for photoemission spectroscopy. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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