A New Breakdown Phenomenon in Fine Structured VLSI Circuits

Autor:	Hiroshi Matsumura, Yoshikazu Ohbayashi, Isao Ohkura, Kazutoshi Miyamoto, Heihachi Matsumoto
Rok vydání:	1981
Předmět:	Very-large-scale integration Materials science business.industry Bipolar junction transistor General Engineering General Physics and Astronomy Substrate (electronics) Line (electrical engineering) Power (physics) Diffusion layer MOSFET Optoelectronics Breakdown voltage business
Zdroj:	Japanese Journal of Applied Physics. 20:L523
ISSN:	1347-4065 0021-4922
DOI:	10.1143/jjap.20.l523
Popis:	In fine structured n-channel MOS VLSI circuits, it is unavoidable that the n+ diffusion layer for the power supply line (VDD) is located near that for the ground line (VSS). The breakdown voltage between VDD and VSS is reduced significantly by the substrate current generated in the surrounding MOSFET's. The resultant current flowing from VDD to VSS becomes large enough to cause various kinds of catastrophic destructions. This phenomenon is well explained by considering the effect of the increased substrate potential of the parasitic VSS-substrate-VDD bipolar transistor.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::f5617beea9d2c96e4bdc1eed9edc3639 https://doi.org/10.1143/jjap.20.l523 Zobrazit plný text záznamu