Nucleation of Multicrystalline Silicon during Directional Solidification
| Autor: | Xue Mei Liu, Wen Hui Ma, Kui Xian Wei, Cong Zhang, Ping Bi, Xiu Hua Chen, Yu Ping Li |
|---|---|
| Rok vydání: | 2016 |
| Předmět: |
Materials science
Silicon Mechanical Engineering Metallurgy Nucleation chemistry.chemical_element 02 engineering and technology Carrier lifetime 010402 general chemistry 021001 nanoscience & nanotechnology Condensed Matter Physics Microstructure 01 natural sciences Casting 0104 chemical sciences chemistry Mechanics of Materials Electrical resistivity and conductivity General Materials Science Ingot 0210 nano-technology Directional solidification |
| Zdroj: | Materials Science Forum. 847:103-108 |
| ISSN: | 1662-9752 |
| DOI: | 10.4028/www.scientific.net/msf.847.103 |
| Popis: | In this work, directional solidification was performed for multicrystalline silicon (mc-Si) ingot casting. The initial nucleation at the bottom of the silicon melt could be controlled by changing the cooling rate from 9 to 20μm/s. Metallographic microscope, X-Ray Diffraction (XRD), Microwave photoconductivity decay meter (μ-PCD) and four-point probe resistivity tester were used to investigate the microstructure, crystal orientation and electrical properties of the mc-Si ingots. The obtained results showed that cooling rate at 17μm/s is the optimum condition for the mc-Si ingots casting, under which the prepared ingot has lower dislocation density of 6×10-3 cm-2, better electrical properties, more uniformer resistivity distribution with an average value of 0.68 Ω×cm and higher minority carrier lifetime with a maximum value of 1.8 μs than that of in the other cooling rate conditions. |
| Databáze: | OpenAIRE |
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