Masked ion beam lithography for proximity printing

Autor: W. Fallmann, A. Chalupka, F. Paschke, E. Cekan, H. Buschbeck, E. Hammel, G. Stangl, H. Vonach, Gerhard Stengl, Hans Loschner
Rok vydání: 1996
Předmět:
Zdroj: Microelectronic Engineering. 30:241-244
ISSN: 0167-9317
DOI: 10.1016/0167-9317(95)00236-7
Popis: Optical and X-Ray proximity printing systems are resolution limited by diffraction and beam dispersion. Parallel dispersion free ion beam systems are therefore ideal to transfer stencil mask patterns onto all sorts of nonideal substrates. A feasibility study was performed with the existing Alpha ion projector of the Society for the Advancements of Microelectronics in Austria operated in the MIBL (Masked Ion Beam Lithography) mode with ≈ 10×10 mm2 exposure field. Structures as small as 0.2 μm in diameter could be transfered even with a gap of 1 mm between stencil mask and substrate. The widening of resist lines with 10% increase in dose was evaluated to be 14 nm for 2800 μm gap and 4 nm for 300 μm gap. This excellent exposure latitude favourably compares with synchrotron based X-ray lithography, where a widening of 20 nm with 10% overexposure has been reported for a 40 μm gap, and 10 nm for 10 μm gap. Promising applications of the MIBL technique include the fabrication of flat panel displays based on vacuum electronics (field emitter displays), surface acoustic wave and microoptic devices and - in combination with reactive ion etching - the fabrication of micro electro mechanical systems (MEMS). Prospects for MIBL steppers of printing fields > 100×100 mm2 are discussed.
Databáze: OpenAIRE
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