A behavior modeling method of integrated CMOS Hall element for circuit simulation

Autor: Pang Xiaomin, Ke Liu, Rongjiang Liu, Zhankun Du, Li Shao, Renwei Zhang
Rok vydání: 2014
Předmět:
Zdroj: 2014 12th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT).
DOI: 10.1109/icsict.2014.7021684
Popis: A behavior modeling method for Hall element in standard CMOS technology is proposed in this work. Using equivalent parameters, the whole Hall device is represented by lumped circuit elements. The usually concerned factors including mismatch, temperature, stress, and geometry are taken into account in this model. Considering the convenience of integration with following readout and processing circuits, this modeling is set up by items that could be simulated together with other circuits in EDA environment.
Databáze: OpenAIRE