Epitaxial Growth on 4H-SiC on-Axis, 0.5°, 1.25°, 2°, 4°, 8° Off-Axis Substrates – Defects Analysis and Reduction

Autor:	Dominika Teklinska, Andrzej Olszyna, Kinga Kościewicz, Grzegorz Kowalski, Wlodek Strupiński, Mateusz Tokarczyk, Krystyna Mazur
Rok vydání:	2011
Předmět:	Materials science Misorientation business.industry Mechanical Engineering Condensed Matter Physics Epitaxy law.invention Reduction (complexity) Crystallography Mechanics of Materials law Etching (microfabrication) Optoelectronics General Materials Science Growth rate Crystallization business
Zdroj:	Materials Science Forum. :95-98
ISSN:	1662-9752
DOI:	10.4028/www.scientific.net/msf.679-680.95
Popis:	A good selection of growth parameters (in-situ etching, C/Si ratio, growth rate) enables obtaining of ~1nm high steps of epitaxial layers, which are comparable to the size of an elementary cell (8°off-axis) and achieve the density of BPD=8•103/cm2. Due to crystallization on substrates with low misorientation (
Databáze:	OpenAIRE
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