Evaluation of dielectric properties of the barium titanium silicate (Ba2TiSi2O8) for microwave applications
Autor: | F. A. C. Nobrega, R. F. Abreu, Antonio Sergio Bezerra Sombra, Anupama Ghosh, H. D. de Andrade, D. da M. Colares, S. J. T. Vasconcelos, S. O. Saturno, J. P. C. do Nascimento, I. S. Queiroz Júnior, J. C. Sales, T. O. Abreu |
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Rok vydání: | 2021 |
Předmět: |
010302 applied physics
Permittivity Dielectric resonator antenna Materials science business.industry Dielectric Condensed Matter Physics 01 natural sciences Atomic and Molecular Physics and Optics Electronic Optical and Magnetic Materials 0103 physical sciences Equivalent circuit Optoelectronics Dielectric loss Grain boundary Electrical and Electronic Engineering Reflection coefficient business Microwave |
Zdroj: | Journal of Materials Science: Materials in Electronics. 32:7034-7048 |
ISSN: | 1573-482X 0957-4522 |
DOI: | 10.1007/s10854-021-05414-7 |
Popis: | This work presents the dielectric properties of Ba2TiSi2O8 in the Radiofrequency (RF) and Microwave (MW) regions. X-ray diffraction analysis showed that the material was obtained as a single-phase without the presence of spurious phases. Complex impedance spectroscopy demonstrated that there was no significant change of permittivity with temperature, whereas the dielectric loss was less than 1. Nyquist diagrams were modelled through an equivalent circuit using two associations of R-CPE related to the grain and the grain boundary effects. The MW analysis showed e′r = 11.01 and tan δ = 4.55 × 10–2, values that are close to the results obtained in the RF region. Moreover, the τf value for Ba2TiSi2O8 was equal to − 47 ppm/°C which is close to the values adequate for a microwave device application. The numerical simulation demonstrated the operation of the material as a Dielectric Resonator Antenna (DRA), where a reflection coefficient below − 10 dB, a realised gain of 6.739 dBi, a bandwidth of 452.96 MHz and a radiation efficiency around 100% were observed. The results indicate that Ba2TiSi2O8 would be an interesting candidate in microwave operating devices in the C-band, as well as in devices operating in RF. |
Databáze: | OpenAIRE |
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