Work Function Shift Mechanism of Metal-Gate Electrode with Ru∕Ti Bilayer
| Autor: | Duck-Kyun Choi, Min-Ho Park, Cheol-Woong Yang, Jinho Ahn, Jungho Park, Taeho Lee, Han-Kyoung Ko, In-Sung Park |
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| Rok vydání: | 2007 |
| Předmět: |
Materials science
Condensed matter physics General Chemical Engineering Bilayer Gate dielectric Nanotechnology Metal visual_art Electrode Electrochemistry visual_art.visual_art_medium General Materials Science Work function Electrical and Electronic Engineering Physical and Theoretical Chemistry Metal gate Layer (electronics) Deposition (law) |
| Zdroj: | Electrochemical and Solid-State Letters. 10:H63 |
| ISSN: | 1099-0062 |
| DOI: | 10.1149/1.2402980 |
| Popis: | The work function shift mechanism of the bilayer metal-gate electrode system has been investigated. An abrupt variation of the metal work function of Ru/Ti/SiO2 was observed at a bottom layer thinner than 7 nm with the tunable range of nearly 1.3 eV. Two plausible explanations are suggested for the work function shift. One is the deposition coverage ratio of two metal layers on gate dielectric due to the sporadic and fast islandlike growth of an ultrathin bottom layer roughly below 1 nm and the other is the metal diffusion of the top layer for a thicker 7n m bottom layer. |
| Databáze: | OpenAIRE |
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