Very Smooth SiO2/SiC Interface Formed by Supercritical Water Oxidation at Low Temperature

Autor:	Takashi Sugino, Naoyoshi Komatsu, Hidemitsu Aoki, Chiharu Kimura, Takashi Futatsuki, Taro Oe
Rok vydání:	2010
Předmět:	Thermal oxidation Supercritical water oxidation Materials science Transistor General Engineering General Physics and Astronomy High density Lower temperature Supercritical fluid law.invention Chemical engineering law Oxidation process Layer (electronics)
Zdroj:	Japanese Journal of Applied Physics. 49:04DF18
ISSN:	1347-4065 0021-4922
DOI:	10.1143/jjap.49.04df18
Popis:	We have formed a SiO2 layer on a SiC surface by supercritical water (SCW) oxidation at a much lower temperature (400 °C) than that of conventional SiC thermal oxidation (1100 °C). This rapid oxidation at a low temperature is attributed to the high density of the oxidizers (H2O and O2) under a high-pressure condition. We also revealed that SCW oxidation under suitable conditions suppresses the formation of SiO2/SiC interface microroughness. The smooth SiO2/SiC interface obtained by this low-temperature oxidation process is expected to contribute to improving the mobility performance of future SiC field-effect transistors (FETs).
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::f52df5b6951770b1a9770a93b91ebb4a https://doi.org/10.1143/jjap.49.04df18 Zobrazit plný text záznamu