Influence of piezoelectric phonons on the magneto optical transition linewidth in GaN and GaAs
| Autor: | Luong Thi Huong, Le Ngoc Minh, Le Thi Quynh Huong, Nguyen Dinh Hien |
|---|---|
| Rok vydání: | 2021 |
| Předmět: |
010302 applied physics
Electron density Materials science Phonon scattering Condensed matter physics Phonon Physics::Optics Gallium nitride 02 engineering and technology Electron Condensed Matter::Mesoscopic Systems and Quantum Hall Effect 021001 nanoscience & nanotechnology Condensed Matter Physics 01 natural sciences Piezoelectricity Atomic and Molecular Physics and Optics Electronic Optical and Magnetic Materials Gallium arsenide Condensed Matter::Materials Science chemistry.chemical_compound chemistry 0103 physical sciences 0210 nano-technology Quantum well |
| Zdroj: | Physica E: Low-dimensional Systems and Nanostructures. 129:114601 |
| ISSN: | 1386-9477 |
| Popis: | We compare piezoelectric phonon scattering mechanism with optical phonon one in both Gallium arsenide (GaAs) and Gallium nitride (GaN) materials of a quantum well through the their contribution to the magneto-optical transition linewidths (MOTLWs). Applying the projection-operator and the profile methods to compute the magneto-optical conductivity tensor (MOCT), magneto-optical absorption power (MOAP), and MOTLWs. Numerical calculation results show that the MOTLWs increase as the temperatures and the magnetic fields increase, but decrease as the electron density and the well width increase for both GaN and GaAs materials. In particular, the MOTLWs due to piezoelectric phonons vary sharper and have larger value than they do due to optical phonons in both GaN and GaAs materials, and the MOTLWs of GaN are larger than those of GaAs for both piezoelectric and optical phonon scattering mechanisms. As small enough quantum-well-width, the piezoelectric phonon modes play an important role and they should be considered in studying the magneto optical transition properties in low-dimensional electron systems. |
| Databáze: | OpenAIRE |
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