Optical Transitions in Cubic GaN Grown by Metalorganic Chemical Vapor Deposition on GaAs (100) Substrate

Autor:	Yang Hui, Wang Zhao-Ping, Han He-Xiang, Li Guo-Hua, Chen Ye, XU Da-Peng
Rok vydání:	2000
Předmět:	Materials science Photoluminescence General Physics and Astronomy Chemical vapor deposition Emission spectrum Substrate (electronics) Atomic physics Excitation Optical quality Shallow donor Molecular beam epitaxy
Zdroj:	Chinese Physics Letters. 17:612-614
ISSN:	1741-3540 0256-307X
DOI:	10.1088/0256-307x/17/8/024
Popis:	Photoluminescence measurements have been performed on cubic GaN films with carrier concentration as low as 3 x 10(13) cm(-3). From the temperature and excitation intensity dependence, the emission lines at 3.268, 3.150 and 3.081 eV were assigned to the excitonic, donor-acceptor pair, and free-to-acceptor transitions, respectively Additionally, we observed two additional emission lines at 2.926 and 2.821 eV, and suggested that they belong to donor-acceptor pair transitions. Furthermore, from the temperature dependence of integral intensities, we confirmed that three donor-acceptor pair transitions (3.150, 2.926, and 2.821 eV) are from a common shallow donor to three different accepters. The excitonic emission at 3.216 eV has a full-width-at-half-maximum value of 41 meV at room temperature, which indicates a good optical quality of our sample.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::f5202ae9376a2f44f0cb449cab066ca3 https://doi.org/10.1088/0256-307x/17/8/024 Zobrazit plný text záznamu