Optical transitions to above‐barrier quasibound states in asymmetric semiconductor heterostructures

Autor:	Moses T. Asom, Charles W. Roberts, Elias N. Glytsis, Gregory N. Henderson, Thomas K. Gaylord, Lawrence C. West
Rok vydání:	1993
Předmět:	Interference filter Physics Physics and Astronomy (miscellaneous) Condensed matter physics business.industry Electron Population inversion Semiconductor laser theory Dipole Semiconductor Stimulated emission Atomic physics business Quantum well
Zdroj:	Applied Physics Letters. 62:1432-1434
ISSN:	1077-3118 0003-6951
DOI:	10.1063/1.108651
Popis:	An asymmetric semiconductor electron wave Fabry–Perot interference filter has been designed with two above‐barrier quasibound states for optical transitions. The upper state was designed to have a spatial confinement lifetime greater than three times that of the lower state (which was designed to be less than 100 fs). Such lifetime ratios and magnitudes, which are nearly impossible for below‐barrier states, satisfy the criteria required for achieving population inversion. Furthermore, the transitions were designed to have large dipole matrix elements. Absorption measurements at multiple temperatures were used to demonstrate the first bound‐to‐quasibound transitions in an asymmetric structure. The experimental energies and dipole matrix elements are in agreement with calculated values. This type of structure could represent the basis for a new room‐temperature infrared semiconductor laser.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::f51d7aab096293e72d65e7924d6e6779 https://doi.org/10.1063/1.108651 Zobrazit plný text záznamu