Enhancement of Electron Mobility by an Intense High-Frequency Irradiation in GaAs-Based Two-Dimensional Systems

Autor:	XL（雷啸霖）（雷啸霖） Lei, YQ Chen
Rok vydání:	1999
Předmět:	Electron mobility Range (particle radiation) Amplitude Materials science Condensed matter physics Terahertz radiation Electric field Relaxation (NMR) General Physics and Astronomy Irradiation Quantum well
Zdroj:	Chinese Physics Letters. 16:134-136
ISSN:	1741-3540 0256-307X
DOI:	10.1088/0256-307x/16/2/021
Popis:	A theoretical examination of the electron transport in GaAs-based quantum wells was carried out under the influence of an intense electromagnetic irradiation in the frequency range from 0.1 to 1 THz, based on the time-dependent, nonlinear steady-state response to the applied electric field. It is found that although at low temperature (T = 10 K) the dc mobility of the systems is suppressed by the intense radiation field, in agreement with the available experimental observation, the effect can be reversed at elevated temperature. At T = 77 and 300 K, the dc mobility of the GaAs system turns out to be enhanced with the increasing strength of the ac field when its amplitude is large than a threshold value.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::f517b695c22e9094841829513ac094ec https://doi.org/10.1088/0256-307x/16/2/021 Zobrazit plný text záznamu