| Autor: |
Qi Liu, Zhaoan Yu, Jiahao Yin, Peng Huang, Jing Liu, Xi Zhu, Ming Liu, Lu Tai, Xiu Long Wu, L. V. Hangbing, Tiancheng Gong, Xiaoxin Xu, Qing Luo, Da Nian Dong, Jie Yu |
| Rok vydání: |
2018 |
| Předmět: |
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| Zdroj: |
2018 IEEE International Electron Devices Meeting (IEDM). |
| DOI: |
10.1109/iedm.2018.8614593 |
| Popis: |
In this work, we proposed a high temperature forming scheme for 28 nm 1Mb RRAM test chip. Compared with room temperature forming scheme, the average forming voltage performed at 125 °C could be greatly reduced from 2.5 V to 1.7 V. Resistance relaxation resulted from the recombination of Vo and 02- that generally occurred after programming was effectively eliminated as the residual 02- in the filament was highly decreased. Benefit from this, retention improvement of more than 40× times was successfully achieved. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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