Patterning of poly‐para‐xylylenes by reactive ion etching
| Autor: | J. T. C. Yeh, K. R. Grebe |
|---|---|
| Rok vydání: | 1983 |
| Předmět: |
chemistry.chemical_classification
Inert Materials science Passivation technology industry and agriculture Analytical chemistry Surfaces and Interfaces Polymer Condensed Matter Physics Surfaces Coatings and Films chemistry Polymerization Chemical engineering Etching (microfabrication) Xylylene Thin film Reactive-ion etching |
| Zdroj: | Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 1:604-608 |
| ISSN: | 1520-8559 0734-2101 |
| DOI: | 10.1116/1.571967 |
| Popis: | Poly‐para‐xylylene family thin films deposited by vapor phase polymerization are pin hole free and are chemically inert to most acids, alkalies, and organic solvents. These properties make this material very attractive as a passivation agent on top of devices. This paper discusses the patterning of such films on planar structures by various masking techniques and the reactive ion etching (RIE) of the poly(monochloro‐p‐xylylene) in an oxygen‐containing plasma, including details like etch rates, control of edge profiles (vertical or tapered), and the process parameters to achieve patterns of 1.5 μm wide and below. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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