Characterization of the OSF-band structure in n-type Cz-Si using photoluminescence-imaging and visual inspection

Autor:	Mari Juel, Rune Søndenå, Hallvard Angelskår, Marie Syre Wiig, Yu Hu
Rok vydání:	2013
Předmět:	Photoluminescence Materials science Silicon Stacking Nucleation chemistry.chemical_element Condensed Matter Physics Oxygen Inorganic Chemistry Crystallography chemistry Materials Chemistry Wafer Wet oxidation Electronic band structure
Zdroj:	Journal of Crystal Growth. 367:68-72
ISSN:	0022-0248
Popis:	Oxygen induced stacking faults (OSFs) are mainly seen in oxygen rich wafers from the seed end of Cz-silicon crystals. In wafers this ring shaped OSF-region delineates a border between two defect regions; usually silicon self-interstitials dominate outside and vacancies inside this ring. High temperature treatment (>800 °C) leads to oxygen precipitation in the border region. These precipitates act as nucleation sites for stacking faults. The standard procedure for characterizing the OSF-rings is to expose an oxidized sample to a preferential etchant, e.g. the highly toxic Wright solution. In this work photoluminescence-imaging is compared to preferential etching and visual inspection. Vertical samples from an n-type Cz-crystal containing an OSF-boundary are studied before and after wet oxidation. High resolution PL-images, which allow for a close inspection of the OSF-area, reveal a complex band-structure of this border region.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::f5056415804465576c7c5e690c07ca57 https://doi.org/10.1016/j.jcrysgro.2012.12.148 Zobrazit plný text záznamu Full Text from ScienceDirect