A 0.4μm Gate-All-Around TFT (GAT) Using a Dummy Nitride Pattern for High Density Memories
| Autor: | Natsuro Tsubouchi, Shigenobu Maeda, O. Tanina, Hirotada Kuriyama, Y. Inoue, Takashi Ipposhi, Shigeto Maegawa, Hisayuki Nishimura |
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| Rok vydání: | 1994 |
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| Zdroj: | Extended Abstracts of the 1994 International Conference on Solid State Devices and Materials. |
| DOI: | 10.7567/ssdm.1994.a-12-2 |
| Databáze: | OpenAIRE |
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