Diamond nucleation enhancement by hydrofluoric acid etching of silicon substrate
| Autor: | Ludvik Martinu, S. Schelz, M. Moisan, C. F. M. Borges |
|---|---|
| Rok vydání: | 1997 |
| Předmět: |
Materials science
Silicon Mechanical Engineering Inorganic chemistry Nucleation chemistry.chemical_element Diamond General Chemistry Substrate (electronics) engineering.material Electronic Optical and Magnetic Materials chemistry.chemical_compound Hydrofluoric acid chemistry Etching (microfabrication) Materials Chemistry Surface roughness engineering Methanol Electrical and Electronic Engineering |
| Zdroj: | Diamond and Related Materials. 6:440-443 |
| ISSN: | 0925-9635 |
| Popis: | We have investigated the effect of silicon substrate pretreatment by hydrofluoric acid (HF) on diamond nucleation. Si (100) substrates were pretreated by ultrasonic scratching with a diamond powder suspension in methanol followed by HF (50%) etching and subsequent water rinsing. The nucleation density ( N D ) was found to be up to 30% higher compared to the unetched substrates, provided the rinsing time was short. Such a nucleation enhancement leads to an increased initial deposition rate and to a lower surface roughness of the deposited diamond films. We found that the Si surface termination by H and F atoms after HF etching is a thermodynamically favorable configuration to initiate the nucleation process. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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