Kinetics of SiC Formation on Graphite Using N2-CO-SiO and N2-CO-H2-SiO Gas Mixtures
| Autor: | Joonho Lee, Joon Seok Oh |
|---|---|
| Rok vydání: | 2019 |
| Předmět: |
010302 applied physics
Materials science Whiskers Kinetics 0211 other engineering and technologies Metals and Alloys 02 engineering and technology Partial pressure Condensed Matter Physics 01 natural sciences Catalysis Reaction rate Crystallography Mechanics of Materials 0103 physical sciences Metallic materials Materials Chemistry Graphite Formation rate 021102 mining & metallurgy |
| Zdroj: | Metallurgical and Materials Transactions B. 50:1808-1813 |
| ISSN: | 1543-1916 1073-5615 |
| Popis: | The formation of SiC on a graphite surface through the reaction between SiO gas and C was investigated. Experiments were conducted at 1843 K, 1873 K, and 1903 K (1570 °C, 1600 °C, and 1630 °C) under N2-CO-SiO or N2-CO-H2-SiO gas mixture atmospheres. The formation rate of SiC on the graphite increased with the increasing temperature and with the decreasing partial pressure of CO gas. The forward (kf) and backward (kb) reaction rate constants of SiC formation with SiO gas were obtained as follows: $$ \ln {k_{\text{f}}}\left( {{\text{mol}}/{\text{c}}{{\text{m}}^2} \cdot {\text{s}} \cdot {\text{atm}}} \right) = 29.175 - 76,083/{\text{T}} $$ $$ \ln {k_{\text{b}}}\left( {{\text{mol}}/{\text{c}}{{\text{m}}^2} \cdot {\text{s}} \cdot {\text{atm}}} \right) = 53.518 - 129,072/{\text{T}} $$ Under the N2-CO-H2-SiO gas mixture atmosphere, the formation rate of SiC on the graphite increased. It was observed that the formation of SiC whiskers was enhanced by the catalytic reaction in liquid Fe-based nanodroplets. |
| Databáze: | OpenAIRE |
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