Normally-Off Sputtered-MoS2 nMISFETs with MoSi2 Contact by Sulfur Powder Annealing and ALD Al2O3 Gate Dielectric for Chip Level Integration
| Autor: | Kentarou Matsuura, Kuniyuki Kakushima, Kazuo Tsutsui, K. Parto, Haruki Tanigawa, Masaya Hamada, Atsushi Hori, Wei Cao, Takuya Hamada, K. Banerjee, H. Wakabayashi, Atsushi Ogura, Takamasa Kawanago, Iriya Muneta, Takuro Sakamoto |
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| Rok vydání: | 2019 |
| Předmět: |
010302 applied physics
Materials science business.industry Annealing (metallurgy) Gate dielectric 0211 other engineering and technologies Molybdenum disilicide chemistry.chemical_element Normally off 02 engineering and technology Chip 01 natural sciences Sulfur chemistry.chemical_compound chemistry Sputtering 021105 building & construction 0103 physical sciences Optoelectronics business Molybdenum disulfide |
| Zdroj: | 2019 19th International Workshop on Junction Technology (IWJT). |
| Popis: | We have successfully fabricated chip-level integrated nMISFETs with sputtered molybdenum disulfide (MoS 2 ) thin channel using sulfur-powder annealing (SPA) and molybdenum disilicide (MoSi 2 ) contact which show n-type-normally-off operation in accumulation. SPA intentionally compensated sulfur vacancies of sputtered MoS 2 film. Eventually, we achieved a normally-off operation, which realizes industrial chip-level LSIs with MoS 2 channel. |
| Databáze: | OpenAIRE |
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