A comparison of donor mapping techniques using the scanning helium ion microscope and scanning electron microscope
| Autor: | Augustus Chee |
|---|---|
| Rok vydání: | 2014 |
| Předmět: |
Conventional transmission electron microscope
Scanning Hall probe microscope Optics Materials science Scanning electron microscope business.industry Scanning transmission electron microscopy Scanning confocal electron microscopy Electron beam-induced deposition business Scanning helium ion microscope Environmental scanning electron microscope |
| Zdroj: | 2014 12th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT). |
| DOI: | 10.1109/icsict.2014.7021215 |
| Popis: | Compared to scanning electron microscope (SEM) dopant contrast where energy filtering is required, this paper reports for the first time strong contrast from donor distributions using the scanning helium ion microscope (SHIM) that can be used to map n-type regions at high resolution without the need for energy filtering. The sensitivity limit is about 1017 donors cm−3 if there were no p-type regions. Quantification problems are discussed and suggestions are given including improvements in detector design and lower beam voltage operation for the SHIM as a tool for high spatial resolution dopant characterisation. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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