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Linear, small-signal enhancement-mode MOSFETs are fabricated in p-type 6H-SiC. Ion implantation of nitrogen and aluminum are used to form the n + -regions for the source/drain contacts and the channel-stop, respectively. Direct current measurements were performed up to 673 K, revealing a drain-to-source saturation current I DSS of 1.53 mA mm -1 at V DS = + 10 V and V GS = + 9 V, a transconductance in saturation of 0.56 mS mm -1 at V GS = + 9 V and a subthreshold slope of 170 mV per decade at room temperature. The excellent high temperature behavior is demonstrated by an I ON /I Off ratio of 10 5 at 673 K (10 8 at 303 K) and low leakage currents (< 10 pA) below threshold up to 523 K. The inversion layer mobility of the electrons μ n is 40 cm 2 V -1 s -1 at room temperature, having a thermally activated region up to 423 K with maximum of 44 cm 2 V -1 s -1 before decreasing by phonon scattering. |
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