Auger electron and x‐ray photoelectron spectroscopy of sputter deposited aluminum nitride

Autor:	J.A. Kovacich, J. Kasperkiewicz, C. R. Aita, David Lichtman
Rok vydání:	1984
Předmět:	Surface coating Auger electron spectroscopy Materials science X-ray photoelectron spectroscopy Silicon chemistry Sputtering Analytical chemistry General Physics and Astronomy chemistry.chemical_element Sputter deposition Nitride Auger
Zdroj:	Journal of Applied Physics. 55:2935-2939
ISSN:	1089-7550 0021-8979
DOI:	10.1063/1.333335
Popis:	Basal crystallographic orientation and semiamorphous films which are nominally aluminum nitride were grown by reactive sputter deposition on silicon substrates and characterized by x‐ray photoelectron spectroscopy and Auger electron spectroscopy. The binding energy of the aluminum 2p, nitrogen 1s, and oxygen 1s core electrons and the kinetic energy of the aluminum LVV and KLL Auger transitions indicate that all films contain a component which is chemically identifiable as AlN. The films contain oxygen as a major impurity. The difference in the manner in which oxygen is incorporated into the films, determined by these two spectroscopic techniques, is discussed and related to deposition conditions.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::f4cd2f40abfc87c9fd890789d77e8793 https://doi.org/10.1063/1.333335 Zobrazit plný text záznamu