Total Dose and Heavy Ion Radiation Response of 55 nm Avalanche Technology Spin Transfer Torque MRAM

Autor:	J. David Ingalls, Jonathan Wang, Aaron M. Williams, David I. Bruce, Rajiv Y. Ranjan, Matthew J. Gadlage
Rok vydání:	2019
Předmět:	Magnetoresistive random-access memory Heavy ion radiation Materials science business.industry Absorbed dose Total dose Spin-transfer torque Optoelectronics Heavy ion Radiation business
Zdroj:	2019 IEEE Radiation Effects Data Workshop.
DOI:	10.1109/redw.2019.8906645
Popis:	The total dose and heavy ion radiation responses of 55 nm non-volatile spin transfer torque memory devices from Avalanche Technology are presented, and show these devices to be inherently largely radiation tolerant.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::f4cd19c682a787d639ccf44fdde5b61e https://doi.org/10.1109/redw.2019.8906645 Zobrazit plný text záznamu