Modeling and validation of ESR and frequency-stability of high-density nanostructured capacitors for embedded power converters
| Autor: | Himani Sharma, Robert Grant Spurney, Saumya Gandhi, Matthew D. Romig, Markondeya Raj Pulugurtha, Holger Brumm, Mitch Weaver, Rao Tummala, Naomi Lollis |
|---|---|
| Rok vydání: | 2021 |
| Předmět: |
Tantalum capacitor
Materials science Nanostructure 02 engineering and technology Dielectric 01 natural sciences Capacitance law.invention Hardware_GENERAL law 0103 physical sciences Electrical and Electronic Engineering 010302 applied physics business.industry Converters 021001 nanoscience & nanotechnology Condensed Matter Physics Atomic and Molecular Physics and Optics Surfaces Coatings and Films Electronic Optical and Magnetic Materials Power (physics) Capacitor visual_art Electronic component visual_art.visual_art_medium Optoelectronics 0210 nano-technology business |
| Zdroj: | Microelectronic Engineering. 247:111593 |
| ISSN: | 0167-9317 |
| DOI: | 10.1016/j.mee.2021.111593 |
| Popis: | Increasingly dense microprocessors will require high-density passive components that can enable integrated power delivery with larger conversion ratios and higher output currents. Of these, nanoparticle-based tantalum capacitors can provide some of the highest volumetric densities compared to other capacitor technologies, due to the high surface area-to-volume ratio. Additionally, their temperature-stable dielectric can handle higher current ratings. However, the complex nanoparticle-based electrode structure results in long conduction paths, resulting in higher ESR and reduced frequency stability. A model is needed that can accurately predict the relationship between capacitor nanostructure and electrical performance so that the nanostructure can be optimized to meet the theoretical limits of device performance. This paper develops such a model, and demonstrates its accuracy by characterizing a real tantalum capacitor device. The model is then used to study the effect of capacitor materials and device geometry on the device performance, including capacitance density, frequency stability, and ESR. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
|
Full Text from ScienceDirect