Probing the Mg2Si/Si(1 1 1) heterojunction for photovoltaic applications
| Autor: | Hirofumi Hoshida, Naofumi Nishikawa (尚史西川), Nikolay G. Galkin, Andrey Gerasimenko, Igor M. Chernev, Yoshikazu Terai, Keisuke Ohdaira, Alexander V. Shevlyagin, Anton K. Gutakovskii |
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| Rok vydání: | 2020 |
| Předmět: |
Materials science
Renewable Energy Sustainability and the Environment business.industry 020209 energy Doping Energy conversion efficiency Photovoltaic system Heterojunction 02 engineering and technology 021001 nanoscience & nanotechnology law.invention chemistry.chemical_compound chemistry law Silicide Solar cell 0202 electrical engineering electronic engineering information engineering Optoelectronics General Materials Science 0210 nano-technology business Current density Molecular beam epitaxy |
| Zdroj: | Solar Energy. 211:383-395 |
| ISSN: | 0038-092X |
| Popis: | n-Mg2Si/p-Si heterojunction solar cell with a 1.4 µm thick unintentionally doped (n = 3 × 1017 cm−3) silicide epitaxial layer on p-Si(1 1 1) (p = 5 × 1014 cm−3) was grown by low temperature (250 °C) molecular beam epitaxy. Heterojunction demonstrated clear rectification and zero bias photoresponse in the (400–1400) nm wavelength range at room temperature. Under AM 1.5 illumination, an open-circuit voltage of 0.21 V, a short-circuit current density of 3.3 mA/cm2, fill factor of 0.36 were obtained while the conversion efficiency reached 0.24%, which is the pioneering demonstration of Mg2Si-based solar cell operation. Combined minority-carrier lifetime, Raman and AFM mapping together with TEM and XRD data revealed that carrier dynamics and photovoltaic performance are limited by the presence of non-epitaxial Mg2Si grains in the upper silicide film layer. However, minority-carrier lifetime up to 7.3 µs for Mg2Si demonstrates its great potential as absorbing material for Si-based solar cells. |
| Databáze: | OpenAIRE |
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