Probing the Mg2Si/Si(1 1 1) heterojunction for photovoltaic applications

Autor: Hirofumi Hoshida, Naofumi Nishikawa (尚史西川), Nikolay G. Galkin, Andrey Gerasimenko, Igor M. Chernev, Yoshikazu Terai, Keisuke Ohdaira, Alexander V. Shevlyagin, Anton K. Gutakovskii
Rok vydání: 2020
Předmět:
Zdroj: Solar Energy. 211:383-395
ISSN: 0038-092X
Popis: n-Mg2Si/p-Si heterojunction solar cell with a 1.4 µm thick unintentionally doped (n = 3 × 1017 cm−3) silicide epitaxial layer on p-Si(1 1 1) (p = 5 × 1014 cm−3) was grown by low temperature (250 °C) molecular beam epitaxy. Heterojunction demonstrated clear rectification and zero bias photoresponse in the (400–1400) nm wavelength range at room temperature. Under AM 1.5 illumination, an open-circuit voltage of 0.21 V, a short-circuit current density of 3.3 mA/cm2, fill factor of 0.36 were obtained while the conversion efficiency reached 0.24%, which is the pioneering demonstration of Mg2Si-based solar cell operation. Combined minority-carrier lifetime, Raman and AFM mapping together with TEM and XRD data revealed that carrier dynamics and photovoltaic performance are limited by the presence of non-epitaxial Mg2Si grains in the upper silicide film layer. However, minority-carrier lifetime up to 7.3 µs for Mg2Si demonstrates its great potential as absorbing material for Si-based solar cells.
Databáze: OpenAIRE