A Performance Comparative at Low Temperatures of Two FET Technologies: 65 nm and 14 nm
Autor: | Daniel Durini, V. Gomez, F. J. De la Hidalga, D. Ferrusca, I. Martinez, M. Velazquez, Omar Lopez-L, E. A. Gutieirrez-D |
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Rok vydání: | 2020 |
Předmět: |
Materials science
010504 meteorology & atmospheric sciences Infrared Scattering business.industry Transconductance 05 social sciences Detector 01 natural sciences Capacitance Threshold voltage 0502 economics and business MOSFET Optoelectronics 050207 economics business 0105 earth and related environmental sciences Quantum computer |
Zdroj: | CCE |
Popis: | Since Moore's law has promoted a rapid evolution of FET technologies sometimes, key aspects stay unnoticed while novel nodes appear at the horizon. In this manuscript we present a study comparing the performance of the 65 nm MOSFET and the 14 nm SOI finFET technology, both at low temperatures, where main electrical parameters are analyzed. In the case of the MOSFET we cooled it down to 77 K, while for the finFET, we achieve to cooled it down to 340 mK. Thus, the intend of this work is to provide a vision of which technology is better at each application, such as quantum computing, astronomy, infrared and UV detectors, particle detectors, etc. |
Databáze: | OpenAIRE |
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