Growth and characterization of fluorocarbon thin films grown from trifluoromethane (CHF3) using pulsed-plasma enhanced CVD

Autor: Karen K. Gleason, Edmund J. Winder
Rok vydání: 2000
Předmět:
Zdroj: Journal of Applied Polymer Science. 78:842-849
ISSN: 1097-4628
0021-8995
DOI: 10.1002/1097-4628(20001024)78:4<842::aid-app180>3.0.co;2-j
Popis: Trifluoromethane (CHF3) was used as a precursor gas in pulsed-plasma enhanced CVD to deposit fluorocarbon films onto Si substrates. The film composition, as measured by X-ray photoelectron spectroscopy (XPS) of the C1s peak, was observed to change as the plasma duty cycle was changed by varying the plasma off-time; this offers a route to control the molecular architecture of deposited films. FTIR results indicate that the film is primarily composed of CFx components, with little or no CH incorporation into the film. The rms roughness of the films is extremely low, approaching that of the Si substrate; the low growth rate and consequent high-power input/thickness is believed to be partly responsible. CHF3 produces films with higher % CF2 compared to other hydrofluorocompound (HFC) monomers (CH2F2 and C2H2F4). However, the deposition kinetics for all three HFC gases display similar trends. In particular, at a fixed on-time of 10 ms, the deposition rate per pulse cycle reaches a maximum at an off-time of approximately 100 ms. © 2000 John Wiley & Sons, Inc. J Appl Polym Sci 78: 842–849, 2000
Databáze: OpenAIRE
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