Autor: |
Adrian M. Ionescu, Dimitrios Tsamados, Silvia Armini, Patrick Merken, Violeta Petrescu, Cornel Cobianu, Hiroshi Mizuta, Yoshishige Tsuchiya, Faezeh Arab Hassani |
Rok vydání: |
2009 |
Předmět: |
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Zdroj: |
Extended Abstracts of the 2009 International Conference on Solid State Devices and Materials. |
DOI: |
10.7567/ssdm.2009.j-6-5 |
Popis: |
This paper presents the In-Plane Resonant NEM (IP R-NEM) sensor based on the mass-detection principle. The proposed sensor features a mass-detection limit of sub atto gram and the sensitivity of the order of zepto gram/Hz, more than eight orders smaller than that of recent QCM-based sensors. The sensor is designed and analyzed using the three-dimensional FEM simulation. Self-assembled linker molecules and adsorbed target molecules on the beam surface are modelled by adding an extra surface coating layer. We study two different surface detection schemes, top-and-bottom and all-around surface detection. The IP R-NEM sensor is integrated with a MOSFET for electrical detection, and the transient response is studied on the system-level using a hybrid electro-mechanical circuit simulation. |
Databáze: |
OpenAIRE |
Externí odkaz: |
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