Anomalous Hall effect in MnSi: Intrinsic to extrinsic crossover

Autor:	Sergey Demishev, I. I. Lobanova, V. V. Glushkov, V. Yu. Ivanov
Rok vydání:	2015
Předmět:	Physics Paramagnetism Physics and Astronomy (miscellaneous) Geometric phase Condensed matter physics Solid-state physics Electrical resistivity and conductivity Hall effect Scattering Charge carrier Fermi surface
Zdroj:	JETP Letters. 101:459-464
ISSN:	1090-6487 0021-3640
DOI:	10.1134/s0021364015070085
Popis:	Temperature dependences of low field Hall resistivity ρH are used to separate anomalous (ρ H ) and normal (R H B) contributions to the Hall effect in chiral magnet MnSi (T c ≈ 29.1 K). It is found that the transition between paramagnetic (T > T c ) and magnetically ordered (T < T c ) phases is accompanied by the change in anomalous Hall resistivity from low temperature behavior governed by Berry phase effects (ρ H = μ0 S 2ρ2 M, T < T c ) to high temperature regime dominated by skew scattering (ρ H = μ0 S 1ρM, T > T c ). The crossover between the intrinsic (∼ρ2) and extrinsic (∼ρ) contributions to the anomalous Hall effect develops together with the noticeable increase in the concentration of charge carriers estimated from the normal Hall coefficient (from n/n Mn(T > T c ) ≈ 0.94 to n/n Mn(T < T c ) ≈ 1.5, n Mn ≈ 4.2 × 1022 cm−3). The observed features may correspond to the dramatic change in Fermi surface topology induced by the onset of long-range magnetic order in MnSi.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::f4a8f7e2081b06ea972c4a5281f5b116 https://doi.org/10.1134/s0021364015070085 Zobrazit plný text záznamu Plný text ve formátu PDF