Dry development of the DESIRE process in a DECR reactor
| Autor: | G. van de Ven, H. Kalter, J. Dijkstra |
|---|---|
| Rok vydání: | 1991 |
| Předmět: |
Materials science
Analytical chemistry Ion current Plasma Substrate (electronics) Condensed Matter Physics Atomic and Molecular Physics and Optics Electron cyclotron resonance Surfaces Coatings and Films Electronic Optical and Magnetic Materials Ion Resist Etching Wafer Electrical and Electronic Engineering |
| Zdroj: | Microelectronic Engineering. 13:455-458 |
| ISSN: | 0167-9317 |
| Popis: | Ion currents to the substrate holder in a Distributed Electron Cyclotron Resonance etcher are maximum at a pressure of 0.15 Pa in oxygen plasmas. The ion current is strongly enhanced by changing the magnet configuration. In the pressure region of maximum ion current, the etching characteristics of oxygen plasmas for dry development of the DESIRE process are measured. The etch selectivity between silylated and unsilylated resist and the lithographic contrast increase with decreasing ion-bombardment energy. From trilevel etching it is found that wafer cooling is important for profile control. Some characteristics of 0.5 μm DESIRE patterns made with i-line 0.42 NA exposure are shown. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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