Effect of Heat Treatment on the Electrical Properties of Thin Yttrium-Doped In2O3 Films
| Autor: | A. V. Sitnikov, O. I. Remizova, I. V. Babkina, V. A. Makagonov, Yu. E. Kalinin, O. V. Zhilova |
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| Rok vydání: | 2018 |
| Předmět: |
inorganic chemicals
Materials science General Chemical Engineering Analytical chemistry Oxide chemistry.chemical_element 02 engineering and technology 01 natural sciences law.invention Inorganic Chemistry chemistry.chemical_compound Electrical resistance and conductance law Sputtering 0103 physical sciences Materials Chemistry Crystallization 010302 applied physics digestive oral and skin physiology Doping Metals and Alloys Yttrium respiratory system 021001 nanoscience & nanotechnology Amorphous solid chemistry sense organs 0210 nano-technology Indium |
| Zdroj: | Inorganic Materials. 54:885-891 |
| ISSN: | 1608-3172 0020-1685 |
| DOI: | 10.1134/s0020168518090030 |
| Popis: | Thin indium oxide films and In–Y–O films containing 0.7 to 3.6 at % Y have been grown by ionbeam sputtering of an indium target and a composite (indium + weighed amounts of yttrium) target in a mixture of argon and oxygen. The thin indium oxide films have a cubic crystal structure (sp. gr. Ia $$\bar 3$$ ). The incorporation of yttrium atoms into indium oxide leads to the formation of an amorphous structure in the as-grown films and an increase in their room-temperature electrical resistance by several orders of magnitude. Lowtemperature electrical resistance data indicate a change in conduction mechanism. High-temperature heat treatment of the thin In–Y–O films leads to the crystallization of their amorphous structure and an increase in their electrical resistance. |
| Databáze: | OpenAIRE |
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