Review of bias-temperature instabilities at the III-N/dielectric interface
Autor: | Clemens Ostermaier, Peter Lagger, Dionyz Pogany, Maria Reiner |
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Rok vydání: | 2018 |
Předmět: |
010302 applied physics
Materials science Condensed matter physics Power switching Interface (computing) Gate dielectric 02 engineering and technology Dielectric 021001 nanoscience & nanotechnology Condensed Matter Physics 01 natural sciences Atomic and Molecular Physics and Optics Surfaces Coatings and Films Electronic Optical and Magnetic Materials Dielectric layer 0103 physical sciences Positive bias Electrical and Electronic Engineering 0210 nano-technology Safety Risk Reliability and Quality Fermi gas |
Zdroj: | Microelectronics Reliability. 82:62-83 |
ISSN: | 0026-2714 |
DOI: | 10.1016/j.microrel.2017.12.039 |
Popis: | Two particular defects are commonly discussed at the III-N interface: the required donor states, known to exist from the formation of the two-dimensional electron gas (2DEG) below a hetero-barrier, and defect states at the interface or within the dielectric layer. It appears that the latter ones are responsible for the ongoing challenge to find a low-defect gate dielectric to reduce positive bias temperature instabilities (PBTI). This raises the question, why the natively given donor states behave almost like fixed charges. We review the known and verified characteristics for both defect types and the link between them. Moreover, we define a lifetime criterion for power switching applications to compare PBTI effects related to III-N interfaces. |
Databáze: | OpenAIRE |
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