Controlled Anodic Oxidation for High Precision Etch Depth in AlGaAs III‐V Semiconductor Structures
| Autor: | F Fouad Karouta, G.A. Acket, Manuela Buda, T.G. van de Roer, L.M.F. Kaufmann, E. Smalbrugge, E.J. Geluk |
|---|---|
| Rok vydání: | 1998 |
| Předmět: |
Materials science
Laser diode Renewable Energy Sustainability and the Environment business.industry Analytical chemistry Oxide Electrolyte Condensed Matter Physics Engraving Surfaces Coatings and Films Electronic Optical and Magnetic Materials law.invention chemistry.chemical_compound Semiconductor Etch pit density chemistry law Ternary compound visual_art Materials Chemistry Electrochemistry visual_art.visual_art_medium p–n junction business |
| Zdroj: | Journal of The Electrochemical Society. 145:1076-1079 |
| ISSN: | 1945-7111 0013-4651 |
| DOI: | 10.1149/1.1838392 |
| Popis: | Controlled anodic oxidation for achieving a better control of etch depth in AlGaAs semiconductor structures is studied. The rates of material consumption and oxide thickness growth for p ++ -GaAs and p-Al 0.38 Ga 0.89 As are given for the citric acid/glycol/water electrolyte. The etch profiles for GaAs/Al 0.45 Ga 0.55 As and GaAs/Al 0.50 Ga 0.40 As layer sequences in laser diode structures are presented. The underetch is rather high and depends on oxidation conditions (constant voltage or constant current). The profile obtained is very rough for constant voltage oxidation and much better when using constant current conditions. The latter also improves the uniformity of oxide growth. The etch rate of the anodic oxide in diluted HCl is much larger for GaAs than for AlGaAs. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
|