Gate-last TiN/HfO2 band edge effective work functions using low-temperature anneals and selective cladding to control interface composition

Autor:	Husam N. Alshareef, Christopher L. Hinkle, A. Li-Fatou, Rohit Galatage, Clive M. Freeman, Erich Wimmer, R. A. Chapman, M. Christensen, J. B. Shaw, Hiroaki Niimi, James J. Chambers, Eric M. Vogel
Rok vydání:	2012
Předmět:	Materials science Physics and Astronomy (miscellaneous) Silicon business.industry Annealing (metallurgy) chemistry.chemical_element PMOS logic chemistry MOSFET Optoelectronics Work function business Forming gas Tin NMOS logic
Zdroj:	Applied Physics Letters. 100:153501
ISSN:	1077-3118 0003-6951
Popis:	Silicon N-metal-oxide-semiconductor (NMOS) and P-metal-oxide-semiconductor (PMOS) band edge effective work functions and the correspondingly low threshold voltages (Vt) are demonstrated using standard fab materials and processes in a gate-last scheme employing low-temperature anneals and selective cladding layers. Al diffusion from the cladding to the TiN/HfO2 interface during forming gas anneal together with low O concentration in the TiN enables low NMOS Vt. The use of non-migrating W cladding along with experimentally detected N-induced dipoles, produced by increased oxygen in the TiN, facilitates low PMOS Vt.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::f499ac5ae93f1a72122c87d877b78fad https://doi.org/10.1063/1.3701165 Zobrazit plný text záznamu