Oxygen Contamination of Multilayer TiNx — SiO2 — Si Structures found by Resonant RBS Analysis

Autor: E. K. Evangelou, Nikos Konofaos, G. Kriembardis, Ch. Dimitriades, E. Kossionides, X. A. Aslanoglou, G. Kaliampakos
Rok vydání: 2019
Předmět:
Zdroj: HNPS Proceedings. 10:20
ISSN: 2654-0088
2654-007X
DOI: 10.12681/hnps.2170
Popis: Multi layer structures consisting of TiN — SiO2 — Si layers operating as MOS devices were constructed and tested for their electrical properties. RBS and resonance reaction analysis were performed for the characterisation of the structure of the devices. The results show a correlation between the structure found by RBS and the electrical performance of the devices.
Databáze: OpenAIRE