Flux Pinning by the InAs Nanorods in Nb Thin Films

Autor:	Dong Ho Kim, MinHyuck Jo, Taejong Hwang, Jae Chul Shin
Rok vydání:	2018
Předmět:	Superconductivity Materials science Flux pinning business.industry Chemical vapor deposition Condensed Matter Physics Electronic Optical and Magnetic Materials Semiconductor Sputtering Vertical direction Optoelectronics Nanorod Electrical and Electronic Engineering Thin film business
Zdroj:	IEEE Transactions on Applied Superconductivity. 28:1-5
ISSN:	1558-2515 1051-8223
DOI:	10.1109/tasc.2018.2800030
Popis:	We investigate the feasibility of using the semiconductor InAs nanorods for flux pinning in Nb thin films. The InAs nanorods are grown in the vertical direction on Si (111) substrates by metal-organic chemical vapor deposition. The grown nanorods are about 80 nm in diameter, 5 μm in height, and 2 × 10 9 /cm 2 in density. The four-terminal strip pattern of Nb films is fabricated on nanorod-grown substrates and, for the reference, on nanorod-free substrates by sputtering through a metal mask. We observe clear enhancement of the upper critical fields and the critical current densities for field oriented along the nanorod axis in the Nb film with embedded nanorods. We also confirm the flux pinning by InAs nanorods in the measurements of the angular dependence of critical current densities. Our results indicate that the InAs nanorods are promising linear defects for flux pinning research in superconductors.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::f49300a319064ffe9c895691813573ad https://doi.org/10.1109/tasc.2018.2800030 Zobrazit plný text záznamu